Thermoelectric Characteristics of n-Type Bi2Te3 and p-Type Sb2Te3 Thin Films Prepared by Co-Evaporation and Annealing for Thermopile Sensor Applications

The Deposition of Bi2Te3 and Sb2Te3 Thermoelectric Thin-films by Thermal Co-Evaporation and Applications in Energy Harvesting

Fabrication and characterization of (Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films by flash evaporated deposition

Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films on glass substrates are fabricated by a flash evaporated deposition method. In order to enhance the performance of the thin films, annealing in an argon atmosphere is carried out for 1 hour in the temperature range from 200 to 400 C. The structure of the thin films, in terms of homogeneity and crystalline quality, is investigated by means of x-ray mapp...

Micro Thermoelectric Cooler Fabrication: Growth and Characterization of Patterned Sb2Te3 and Bi2Te3 Films

A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during t...

Optimization of thermoelectric properties on Bi2Te3 thin films deposited by thermal co-evaporation

The optimization of the thermal co-evaporation deposition process for n-type bismuth telluride (Bi2Te3) thin films onto polyimide substrates for thermoelectric applications is reported. The influence of deposition parameters (evaporation rate and substrate temperature) on film composition and thermoelectric properties was studied for optimal thermoelectric performance. Energy-dispersive X-ray s...

Preparation and Thermoelectric Properties of P-Type (Bi0.25Sb0.75)2Te3 Thin Films

P-type (Bi0.25Sb0.75)2Te3 thermoelectric thin films were deposited by flash evaporation method with thickness between 50-400 nm. All of the thin films were annealed in 503 K for one hour. Phase structure of thin films, surface morphology and stoichiometric ratio were characterized via X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscop...